arXiv · 1012.0878
High frequency limit for single-electron pumping operations
Abstract
In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we find that in general the electrical current is not proportional to the frequency of the external signals in the single-electron devices, due to the strong quantum coherence tunneling effect.
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Chuan-Yu Lin, Wei-Min Zhang. 2010-12-04. High frequency limit for single-electron pumping operations. https://arxiv.org/abs/1012.0878
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