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Atomistic theory of spin relaxation in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field

Hai Wei·Ming Gong·G-C Guo·Lixin He
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Abstract

We present full atomistic calculations of the spin-flip time (T$_{1}$) of electrons and holes mediated by acoustic phonons in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field. At low magnetic field, the first-order process is suppressed, and the second-order process becomes dominant. We find that the spin-phonon-interaction induced spin relaxation time is 40 - 80 s for electrons, and 1 - 20 ms for holes at 4.2 K. The calculated hole-spin relaxation times are in good agreement with recent experiments, which suggests that the two-phonon process is the main relaxation mechanism for hole-spin relaxation in the self-assembled quantum dots at zero field. We further clarify the structural and alloy composition effects on the spin relaxation in the quantum dots.

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Hai Wei, Ming Gong, G-C Guo, Lixin He. 2010-11-22. Atomistic theory of spin relaxation in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field. https://doi.org/10.1103/physrevb.85.045317

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