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arXiv · 1011.1959

The impact of spatial fluctuations in the ultra-violet background on intergalactic carbon and silicon

James S. Bolton·Matteo Viel
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Abstract

Spatial inhomogeneities in the spectral shape of the ultra-violet background (UVB) at the tail-end of HeII reionisation are thought to be the primary cause of the large fluctuations observed in the HeII to HI Ly-a forest optical depth ratio, tau_HeII/tau_HI, at z~2-3. These spectral hardness fluctuations will also influence the ionisation balance of intergalactic metals; we extract realistic quasar absorption spectra from a large hydrodynamical simulation to examine their impact on intergalactic SiIV and CIV absorbers. Using a variety of toy UVB models, we find that while the predicted spatial inhomogeneities in spectral hardness have a significant impact on tau_HeII/tau_HI, the longer mean free path for photons with frequencies above and below the HeII ionisation edge means these fluctuations have less effect on the SiIV and CIV ionisation balance. Furthermore, UVB models which produce the largest fluctuations in specific intensity at the HeII ionisation edge also have the softest ionising spectra, and thus result in photo-ionisation rates which are too low to produce significant fluctuations in the observed tau_SiIV/tau_CIV. Instead, we find spatial variations in the IGM metallicity will dominate any scatter in tau_SiIV/tau_CIV. Our results suggest that observational evidence for homogeneity in the observed tau_SiIV/tau_CIV distribution does not rule out the possibility of significant fluctuations in the UVB spectral shape at z~2-3. On the other hand, the scatter in metallicity inferred from observations of intergalactic CIV and SiIV absorption at z~2-3 using spatially uniform ionisation corrections is likely intrinsic, and therefore provides a valuable constraint on intergalactic metal enrichment scenarios at these redshifts.

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James S. Bolton, Matteo Viel. 2010-11-09. The impact of spatial fluctuations in the ultra-violet background on intergalactic carbon and silicon. https://doi.org/10.1111/j.1365-2966.2011.18384.x

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