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arXiv · 1011.0062

Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design

Debdeep Jena·John Simon·Albert·Wang·Yu Cao·Kevin Goodman·Jai Verma·Satyaki Ganguly·Guowang Li·Kamal Karda·Vladimir Protasenko·Chuanxin Lian·Thomas Kosel·Patrick Fay·Huili Xing
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Abstract

The role of spontaneous and piezoelectric polarization in III-V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined.

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Debdeep Jena, John Simon, Albert, Wang, Yu Cao, Kevin Goodman, Jai Verma, Satyaki Ganguly, Guowang Li, Kamal Karda, Vladimir Protasenko, Chuanxin Lian, Thomas Kosel, Patrick Fay, Huili Xing. 2010-10-30. Polarization-Engineering in III-V Nitride Heterostructures: New Opportunities For Device Design. https://doi.org/10.1002/pssa.201001189

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