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arXiv · 1010.5743

Organic Zener Diodes: Tunneling across the Gap in Organic Semiconductor Materials

Hans Kleemann·Rafael Gutierrez·Frank Lindner·Stanislav Avdoshenko·Pedro D. Manrique·Björn Lüssem·Gianaurelio Cuniberti·Karl Leo
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Abstract

Organic Zener diodes with a precisely adjustable reverse breakdown from -3 V to -15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a tunneling mechanism across the HOMO-LUMO gap of neigh- boring molecules. The experimental data are confirmed by a minimal Hamiltonian model approach, including coherent tunneling and incoherent hopping processes as possible charge transport pathways through the effective device region.

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Hans Kleemann, Rafael Gutierrez, Frank Lindner, Stanislav Avdoshenko, Pedro D. Manrique, Björn Lüssem, Gianaurelio Cuniberti, Karl Leo. 2010-10-27. Organic Zener Diodes: Tunneling across the Gap in Organic Semiconductor Materials. https://doi.org/10.1021/nl102916n

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