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arXiv · 1009.3836

Direct measurements of band gap grading in polycrystalline CIGS solar cells

M. P. Heinrich·Z-H. Zhang·Y. Zhang·O. Kiowski·M. Powalla·U. Lemmer·A. Slobodskyy
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Abstract

We present direct measurements of depth-resolved band gap variations of CuIn(1-x)Ga(x)Se2 thin-film solar cell absorbers. A new measurement technique combining parallel measurements of local thin-film interference and spectral photoluminescence was developed for this purpose. We find sample-dependent correlation parameters between measured band gap depth and composition profiles, and emphasize the importance of direct measurements. These results bring a quantitative insight into the electronic properties of the solar cells and open a new way to analyze parameters that determine the efficiency of solar cells.

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M. P. Heinrich, Z-H. Zhang, Y. Zhang, O. Kiowski, M. Powalla, U. Lemmer, A. Slobodskyy. 2010-09-20. Direct measurements of band gap grading in polycrystalline CIGS solar cells. https://arxiv.org/abs/1009.3836

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