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arXiv · 1009.1907

Low-voltage nanodomain writing in He-implanted lithium niobate crystals

M. Lilienblum·A. Ofan·Á. Hoffmann·O. Gaathon·L. Vanamurthy·S. Bakhru·H. Bakhru·R. M. Osgood, Jr.·E. Soergel
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Abstract

A scanning force microscope tip is used to write ferroelectric domains in He-implanted single-crystal lithium niobate and subsequently probe them by piezoresponse force microscopy. Investigation of cross-sections of the samples showed that the buried implanted layer, $\sim 1$\,\textmu m below the surface, is non-ferroelectric and can thus act as a barrier to domain growth. This barrier enabled stable surface domains of $< 1$\,\textmu m size to be written in 500\,\textmu m-thick crystal substrates with voltage pulses of only 10\,V applied to the tip.

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M. Lilienblum, A. Ofan, Á. Hoffmann, O. Gaathon, L. Vanamurthy, S. Bakhru, H. Bakhru, R. M. Osgood, Jr., E. Soergel. 2010-09-09. Low-voltage nanodomain writing in He-implanted lithium niobate crystals. https://doi.org/10.1063/1.3319839

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