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arXiv · 1009.0426

THz emission induced by optical beating in nanometer-length field-effect-transistors

P. Nouvel·J. Torres·H. Marinchio·T. Laurent·C. Palermo·L. Varani·P. Shiktorov·E. Starikov·V. Gruzinskis·F. Teppe
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Abstract

Experimental results of direct measurement of resonant monochromatic terahertz emission optically excited in InGaAs transistor channels are presented. The emission is attributed to two-dimensional plasma waves excited by photogeneration of electron-hole pairs in the channel at the frequency $f_0$ of the beating of two cw-laser sources. The presence of resonances for the radiation emission in the range of $f_0\pm 10$ GHz (with $f_0$ from 0.3 up to 0.5 THz) detected by a Si-bolometer is found. Numerical results support that such a high quality of the emission resonances can be explained by the approach of an instability in the transistor channel.

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P. Nouvel, J. Torres, H. Marinchio, T. Laurent, C. Palermo, L. Varani, P. Shiktorov, E. Starikov, V. Gruzinskis, F. Teppe. 2010-09-02. THz emission induced by optical beating in nanometer-length field-effect-transistors. https://arxiv.org/abs/1009.0426

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