arXiv · 1008.4736
Single photon emission from silicon-vacancy centres in CVD-nano-diamonds on iridium
Abstract
We introduce a process for the fabrication of high quality, spatially isolated nano-diamonds on iridium via microwave plasma assisted CVD-growth. We perform spectroscopy of single silicon-vacancy (SiV)-centres produced during the growth of the nano-diamonds. The colour centres exhibit extraordinary narrow zero-phonon-lines down to 0.7 nm at room temperature. Single photon count rates up to 4.8 Mcps at saturation make these SiV-centres the brightest diamond based single photon sources to date. We measure for the first time the fine structure of a single SiV-centre thus confirming the atomic composition of the investigated colour centres.
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Elke Neu, David Steinmetz, Janine Riedrich-Moeller, Stefan Gsell, Martin Fischer, Matthias Schreck, Christoph Becher. 2010-08-27. Single photon emission from silicon-vacancy centres in CVD-nano-diamonds on iridium. https://doi.org/10.1088/1367-2630/13/2/025012
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