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arXiv · 1008.4425

Charge carrier mobility degradation in graphene sheet under induced strain

Raheel Shah·Tariq M. Mohiuddin
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Abstract

Impact of induced strain on charge carrier mobility is investigated for a monolayer graphene sheet. Mobility is computed within Born approximation by including impurity scattering, surface roughness effects and interaction with lattice phonons. Unlike its sSi counterpart, strained graphene shows a drop in mobility with increasing strain. Main reason for this effect is decrease in Fermi velocity due to induced distortions in the graphene honeycomb.

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Raheel Shah, Tariq M. Mohiuddin. 2010-08-26. Charge carrier mobility degradation in graphene sheet under induced strain. https://arxiv.org/abs/1008.4425

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