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arXiv · 1008.3599

Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis

Sneh Saurabh·M. Jagadesh Kumar
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Abstract

Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage. In order to employ the TFET for circuit applications, these problems need to be tackled. In this paper, a novel lateral strained double-gate TFET (SDGTFET) is presented. Using device simulation, we show that the SDGTFET has a higher on-current, low leakage, low threshold voltage, excellent subthreshold slope, and good short channel effects and also meets important ITRS guidelines.

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Sneh Saurabh, M. Jagadesh Kumar. 2010-08-21. Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and Analysis. https://doi.org/10.1143/jjap.48.064503

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