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arXiv · 1007.4538

Competition between excitonic gap generation and disorder scattering in graphene

Guo-Zhu Liu·Jing-Rong Wang
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Abstract

We study the disorder effect on the excitonic gap generation caused by strong Coulomb interaction in graphene. By solving the self-consistently coupled equations of dynamical fermion gap $m$ and disorder scattering rate $Γ$, we found a critical line on the plane of interaction strength $λ$ and disorder strength $g$. The phase diagram is divided into two regions: in the region with large $λ$ and small $g$, $m \neq 0$ and $Γ= 0$; in the other region, $m = 0$ and $Γ\neq 0$ for nonzero $g$. In particular, there is no coexistence of finite fermion gap and finite scattering rate. These results imply a strong competition between excitonic gap generation and disorder scattering. This conclusion does not change when an additional contact four-fermion interaction is included. For sufficiently large $λ$, the growing disorder may drive a quantum phase transition from an excitonic insulator to a metal.

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Guo-Zhu Liu, Jing-Rong Wang. 2011-03-15. Competition between excitonic gap generation and disorder scattering in graphene. https://doi.org/10.1088/1367-2630/13/3/033022

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