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arXiv · 1007.3641

Effect of picosecond strain pulses on thin layers of the ferromagnetic semiconductor (Ga,Mn)(As,P)

L. Thevenard·E. Peronne·C. Gourdon·C. Testelin·M. Cubukcu·E. Charron·S. Vincent·A. Lemaitre·B. Perrin
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Abstract

The effect of picosecond acoustic strain pulses (ps-ASP) on a thin layer of (Ga,Mn)As co-doped with phosphorus was probed using magneto-optical Kerr effect (MOKE). A transient MOKE signal followed by low amplitude oscillations was evidenced, with a strong dependence on applied magnetic field, temperature and ps-ASP amplitude. Careful interferometric measurement of the layer's thickness variation induced by the ps-ASP allowed us to model very accurately the resulting signal, and interpret it as the strain modulated reflectivity (differing for $\sigma_{\pm}$ probe polarizations), independently from dynamic magnetization effects.

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L. Thevenard, E. Peronne, C. Gourdon, C. Testelin, M. Cubukcu, E. Charron, S. Vincent, A. Lemaitre, B. Perrin. 2010-07-21. Effect of picosecond strain pulses on thin layers of the ferromagnetic semiconductor (Ga,Mn)(As,P). https://doi.org/10.1103/physrevb.82.104422

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