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arXiv · 1007.3504

High-field Carrier Velocity and Current Saturation in Graphene Field-Effect Transistors

Brett W. Scott·Jean-Pierre Leburton
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Abstract

We obtain the output characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed expressions for the conductance, transconductance and saturation voltage are derived. We found good agreement with the experimental data of Meric et al. [1], without assuming a carrier density-dependent velocity saturation.

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Brett W. Scott, Jean-Pierre Leburton. 2010-07-20. High-field Carrier Velocity and Current Saturation in Graphene Field-Effect Transistors. https://arxiv.org/abs/1007.3504

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