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arXiv · 1007.3168

Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice

G. De Simoni·A. Singha·M. Gibertini·B. Karmakar·M. Polini·V. Piazza·L. N. Pfeiffer·K. W. West·F. Beltram·V. Pellegrini
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Abstract

We report the magneto-transport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magneto-resistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions.

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G. De Simoni, A. Singha, M. Gibertini, B. Karmakar, M. Polini, V. Piazza, L. N. Pfeiffer, K. W. West, F. Beltram, V. Pellegrini. 2010-07-19. Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice. https://doi.org/10.1063/1.3493189

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