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arXiv · 1007.1774

Robust half-metallic ferromagnet of cubic VGe3Si4

San-Dong Guo·Bang-Gui Liu
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Abstract

To seek half-metallic ferromagnets compatible with the GeSi semiconductor, we use state-of-the-art density-functional-theory methods to study cubic $\mathrm{VGe_3Si_4}$. After optimizing its crystal structure with various magnetic orders considered, we find the ferromagnetic structure is the ground state phase and investigate its stability, and then study its spin-resolved electronic structure with an improved method. Our calculated results show that the cubic $\mathrm{VGe_3Si_4}$ is a half-metallic ferromagnet with half-metallic gap 350 meV, and it is structurally stable against deformations and magnetically robust against antiferromagnetic fluctuations. These results make us believe that the cubic $\mathrm{VGe_3Si_4}$ could be synthesized as good thin films soon and used in practical spintronic devices.

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San-Dong Guo, Bang-Gui Liu. 2010-07-11. Robust half-metallic ferromagnet of cubic VGe3Si4. https://arxiv.org/abs/1007.1774

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