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arXiv · 1006.5685

Mapping spin-orbit splitting in strained InGaAs epilayers

B. M. Norman·C. J. Trowbridge·J. Stephens·A. C. Gossard·D. D. Awschalom·V. Sih
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Abstract

Time- and spatially-resolved Faraday rotation spectroscopy is used to measure the magnitude and direction of the momentum-dependent spin splitting in strained InGaAs epilayers. The epilayers are lattice-matched to the GaAs substrate and designed to reduce inhomogeneous effects related to strain relaxation. Measurements of momentum-dependent spin splitting as a function of electron spin drift velocity along [100], [010], [110] and [1$\overline{1}$0] directions enable separation of isotropic and anisotropic effective magnetic fields that arise from uniaxial and biaxial strain along $\langle$110$\rangle$. We relate our findings to previous measurements and theoretical predictions of spin splitting for inversion symmetry breaking in bulk strained semiconductors.

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B. M. Norman, C. J. Trowbridge, J. Stephens, A. C. Gossard, D. D. Awschalom, V. Sih. 2010-06-29. Mapping spin-orbit splitting in strained InGaAs epilayers. https://doi.org/10.1103/physrevb.82.081304

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