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arXiv · 1006.1852

Modelling Multi Quantum Well Solar Cell Efficiency

James P. Connolly·Jenny Nelson·Ian Ballard·Keith W. J. Barnham·Carsten Rohr·Chris Button·John Roberts·Tom Foxon
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Abstract

The spectral response of quantum well solar cells (QWSCs) is well understood. We describe work on QWSC dark current theory which combined with SR theory yields a system efficiency. A methodology published for single quantum well (SQW) systems is extended to MQW systems in the Al(x) Ga(1-x) As and InGa(0.53x) As(x) P systems. The materials considered are dominated by Shockley-Read-Hall (SRH) recombination. The SRH formalism expresses the dark current in terms of carrier recombination through mid-gap traps. The SRH recombination rate depends on the electron and hole densities of states (DOS) in the barriers and wells, which are well known, and of carrier non-radiative lifetimes. These material quality dependent lifetimes are extracted from analysis of suitable bulk control samples. Consistency over a range of AlGaAs controls and QWSCs is examined, and the model is applied to QWSCs in InGaAsP on InP substrates. We find that the dark currents of MQW systems require a reduction of the quasi Fermi level separation between carrier populations in the wells relative to barrier material, in line with previous studies. Consequences for QWSCs are considered suggesting a high efficiency potential.

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James P. Connolly, Jenny Nelson, Ian Ballard, Keith W. J. Barnham, Carsten Rohr, Chris Button, John Roberts, Tom Foxon. 2010-06-09. Modelling Multi Quantum Well Solar Cell Efficiency. https://arxiv.org/abs/1006.1852

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