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arXiv · 1003.1777

Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession

T. Sasaki·T. Oikawa·T. Suzuki·M. Shiraishi·Y. Suzuki·K. Noguchi
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Abstract

The Hanle-type spin precession method was carried out associated with non-local magnetoresistance measurement using a highly doped (5\times10^19) silicon channel. The spin diffusion length obtained by the Hanle-method is in good agreement with that by the gap dependence of non-local signals. We have evaluated the interface and bulk channel effects separately, and it was demonstrated that the major source of temperature dependence of non-local signals originates from the spin polarization reduction at interface between the tunnel barrier and silicon.

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T. Sasaki, T. Oikawa, T. Suzuki, M. Shiraishi, Y. Suzuki, K. Noguchi. 2010-03-09. Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession. https://doi.org/10.1063/1.3367748

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