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arXiv · 1003.1274

Diffuse-interface model for nanopatterning induced by self-sustained ion etch masking

S. Le Roy·E. Søndergård·M. Kildemo·I. S. Nerbø·M. Plapp
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Abstract

We construct a simple phenomenological diffuse-interface model for composition-induced nanopatterning during ion sputtering of alloys. In simulations, this model reproduces without difficulties the high-aspect ratio structures and tilted pillars observed in experiments. We investigate the time evolution of the pillar height, both by simulations and by {\it in situ} ellipsometry. The analysis of the simulation results yields a good understanding of the transitions between different growth regimes and supports the role of segregation in the pattern-formation process.

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S. Le Roy, E. Søndergård, M. Kildemo, I. S. Nerbø, M. Plapp. 2010-03-05. Diffuse-interface model for nanopatterning induced by self-sustained ion etch masking. https://doi.org/10.1103/physrevb.81.161401

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