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arXiv · 1002.3543

Quantum well infrared photodetectors hardiness to the non ideality of the energy band profile

Emmanuel Lhuillier·Nicolas Pere-Laperne·Isabelle Ribet-Mohamed·Emmanuel Rosencher·Gilles Patriarche·Amandine Buffaz·Vincent Berger·Alexandru Nedelcu·Mathieu Carras
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Abstract

We report results on the effect of a non-sharp and disordered potential in Quantum Well Infrared Photodetectors (QWIP). Scanning electronic transmission microscopy is used to measure the alloy profile of the structure which is shown to present a gradient of composition along the growth axis. Those measurements are used as inputs to quantify the effect on the detector performance (peak wavelength, spectral broadening and dark current). The influence of the random positioning of the doping is also studied. Finally we demonstrate that QWIP properties are quite robust with regard to the non ideality of the energy band profile.

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Emmanuel Lhuillier, Nicolas Pere-Laperne, Isabelle Ribet-Mohamed, Emmanuel Rosencher, Gilles Patriarche, Amandine Buffaz, Vincent Berger, Alexandru Nedelcu, Mathieu Carras. 2010-02-18. Quantum well infrared photodetectors hardiness to the non ideality of the energy band profile. https://doi.org/10.1063/1.3446093

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