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arXiv · 1002.2998

Fabrication and characterization of an induced GaAs single hole transistor

O. Klochan·J. C. H. Chen·A. P. Micolich·A. R. Hamilton·K. Muraki·Y. Hirayama
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Abstract

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulation-doped GaAs single electron transistors (SETs), and almost an order of magnitude better than in silicon SETs.

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O. Klochan, J. C. H. Chen, A. P. Micolich, A. R. Hamilton, K. Muraki, Y. Hirayama. 2010-02-16. Fabrication and characterization of an induced GaAs single hole transistor. https://doi.org/10.1063/1.3336011

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