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arXiv · 1002.0997

Thickness monitoring of graphene on SiC using low-energy electron diffraction

P. J. Fisher·Luxmi·N. Srivastava·S. Nie·R. M. Feenstra
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Abstract

The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the graphene is examined. The ratio of primary diffraction spot intensities for graphene compared to SiC is measured for a series of samples of known graphene thickness (determined using low-energy electron microscopy). It is found that this ratio is effective for determining graphene thicknesses in the range 1 to 3 monolayers. Effects of a distribution of graphene thicknesses on this method of thickness determination are considered.

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P. J. Fisher, Luxmi, N. Srivastava, S. Nie, R. M. Feenstra. 2010-02-04. Thickness monitoring of graphene on SiC using low-energy electron diffraction. https://arxiv.org/abs/1002.0997

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