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arXiv · 1001.5449

Conversion of neutral nitrogen-vacancy centers to negatively-charged nitrogen-vacancy centers through selective oxidation

K. -M. C. Fu·C. Santori·P. E. Barclay·R. G. Beausoleil
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Abstract

The conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers is demonstrated for centers created by ion implantation and annealing in high-purity diamond. Conversion occurs with surface exposure to an oxygen atmosphere at 465 C. The spectral properties of the charge-converted centers are investigated. Charge state control of nitrogen-vacancy centers close to the diamond surface is an important step toward the integration of these centers into devices for quantum information and magnetic sensing applications.

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K. -M. C. Fu, C. Santori, P. E. Barclay, R. G. Beausoleil. 2010-01-29. Conversion of neutral nitrogen-vacancy centers to negatively-charged nitrogen-vacancy centers through selective oxidation. https://doi.org/10.1063/1.3364135

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