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Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature

Bartholomaeus N. Szafranek·Daniel Schall·Martin Otto·Daniel Neumaier·Heinrich Kurz
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Abstract

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of ~sim50 meV. This demonstrates the potential of bilayer graphene as FET channel material in a conventional CMOS environment.

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Bartholomaeus N. Szafranek, Daniel Schall, Martin Otto, Daniel Neumaier, Heinrich Kurz. 2010-01-28. Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature. https://doi.org/10.1063/1.3364139

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