Enhanced shot noise in carbon nanotube field-effect transistors

Alessandro Betti; Gianluca Fiori; Giuseppe Iannaccone

doi:10.1063/1.3274128

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arXiv · 1001.4144

Enhanced shot noise in carbon nanotube field-effect transistors

Alessandro Betti·Gianluca Fiori·Giuseppe Iannaccone

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Abstract

We predict shot noise enhancement in defect-free carbon nanotube field-effect transistors through a numerical investigation based on the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green functions formalism, and on a Monte Carlo approach to reproduce injection statistics. Noise enhancement is due to the correlation between trapping of holes from the drain into quasi-bound states in the channel and thermionic injection of electrons from the source, and can lead to an appreciable Fano factor of 1.22 at room temperature.

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Alessandro Betti, Gianluca Fiori, Giuseppe Iannaccone. 2010-01-23. Enhanced shot noise in carbon nanotube field-effect transistors. https://doi.org/10.1063/1.3274128

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