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arXiv · 0912.4216

Structural and paramagnetic properties of dilute Ga1-xMnxN

Wiktor Stefanowicz·Dariusz Sztenkiel·Bogdan Faina·Andreas Grois·Mauro Rovezzi·Thibaut Devillers·Francesco d'Acapito·Andrea Navarro-Quezada·Tian Li·Rafal Jakiela·Maciej Sawicki·Tomasz Dietl·Alberta Bonanni
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Abstract

Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction, and extended x-ray absorption fine structure studies do not reveal any crystallographic phase separation and indicate that Mn occupies Ga-substitutional sites in the Mn concentration range up to 1%. The magnetic properties as a function of temperature, magnetic field and its orientation with respect to the c-axis of the wurtzite structure can be quantitatively described by the paramagnetic theory of an ensemble of non-interacting Mn$^{3+}$ ions in the relevant crystal field, a conclusion consistent with the x-ray absorption near edge structure analysis. A negligible contribution of Mn in the 2+ charge state points to a low concentration of residual donors in the studied films. Studies on modulation doped p-type (Ga,Mn)N/(Ga,Al)N:Mg heterostructures do not reproduce the high temperature robust ferromagnetism reported recently for this system.

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Wiktor Stefanowicz, Dariusz Sztenkiel, Bogdan Faina, Andreas Grois, Mauro Rovezzi, Thibaut Devillers, Francesco d'Acapito, Andrea Navarro-Quezada, Tian Li, Rafal Jakiela, Maciej Sawicki, Tomasz Dietl, Alberta Bonanni. 2011-07-21. Structural and paramagnetic properties of dilute Ga1-xMnxN. https://doi.org/10.1103/physrevb.81.235210

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