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arXiv · 0912.3409

Quantum-level control in a III-V-based ferromagnetic-semiconductor heterostructure with a GaMnAs quantum well and double barriers

Shinobu Ohya·Iriya Muneta·Masaaki Tanaka
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Abstract

We investigate the spin-dependent tunneling properties in a three-terminal III-V-based ferromagnetic-semiconductor heterostructure with a 2.5-nm-thick GaMnAs quantum well (QW) and double barriers. We successfully control the quantum levels and modulate the spin-dependent current with varying the voltage of the electrode connected to the GaMnAs QW. Our results will open up a new possibility for realizing three-terminal spin resonant-tunneling devices.

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Shinobu Ohya, Iriya Muneta, Masaaki Tanaka. 2009-12-17. Quantum-level control in a III-V-based ferromagnetic-semiconductor heterostructure with a GaMnAs quantum well and double barriers. https://doi.org/10.1063/1.3298358

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