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arXiv · 0912.1336

Improvement of the poly-3-hexylthiophene transistor performance using small molecule contact functionalization

Rebecca Winter·Maria S Hammer·Carsten Deibel·Jens Pflaum
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Abstract

We demonstrate an approach to improve poly-3-hexylthiophene field effect transistors by modifying the gold contacts with monolayer thick pentacenequinone (PQ) or naphthalene (NL). The effective contact resistance is reduced by a factor of two and sixteen for interlayers of PQ and NL, respectively. The observation is attributed to different injection barriers at the metal-organic interface caused by the functionalization and to an additional tunneling barrier enhancing the on/off ratios. This barrier yields to activation energies of 37meV (NL) and 104meV (PQ) below 190K, which are smaller than without functionalization, 117meV.

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Rebecca Winter, Maria S Hammer, Carsten Deibel, Jens Pflaum. 2009-12-07. Improvement of the poly-3-hexylthiophene transistor performance using small molecule contact functionalization. https://doi.org/10.1063/1.3276694

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