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arXiv · 0912.0754

Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy

G. Scappucci·G. Capellini·W. C. T. Lee·M. Y. Simmons
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Abstract

In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001. The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat Ge(001) surface with a scanning tunneling microscope tip operating in ultra-high vacuum. The influence of the tip-to-sample bias on the lithographic process have been investigated. Lithographic patterns with feature-sizes from 200 nm to 1.8 nm have been achieved by varying the tip-to-sample bias. These results open up the possibility of a scanning-probe lithography approach to the fabrication of future atomic-scale devices in germanium.

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G. Scappucci, G. Capellini, W. C. T. Lee, M. Y. Simmons. 2009-12-03. Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy. https://doi.org/10.1088/0957-4484/20/49/495302

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