arXiv · 0912.0711
Evidence of fractional matching states in nanoperforated Nb thin film grown on porous silicon
Abstract
Resistive transitions have been measured on a perforated Nb thin film with a lattice of holes with the period of the order of ten nanometers. Bumps in the dR/dH versus H curves have been observed at the first matching field and its fractional values, 1/4, 1/9 and 1/16. This effect has been related to different vortex lattice configurations made available by the underlying lattice of holes.
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M. Trezza, C. Cirillo, S. L. Prischepa, C. Attanasio. 2009-12-03. Evidence of fractional matching states in nanoperforated Nb thin film grown on porous silicon. https://doi.org/10.1209/0295-5075%2F88%2F57006
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