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arXiv · 0911.1847

Well-width dependence of valley splitting in Si/SiGe quantum wells

Kohei Sasaki·Ryuichi Masutomi·Kiyohiko Toyama·Kentarou Sawano·Yasuhiro Shiraki·Tohru Okamoto
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Abstract

The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence of the longitudinal resistivity at the Landau level filling factor $\nu=1$, are much larger than those for 10 and 20 nm QWs. This is consistent with the well-width dependence of the bare valley splitting estimated from the comparison with the Zeeman splitting in the Shubnikov-de Haas oscillations.

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Kohei Sasaki, Ryuichi Masutomi, Kiyohiko Toyama, Kentarou Sawano, Yasuhiro Shiraki, Tohru Okamoto. 2009-11-10. Well-width dependence of valley splitting in Si/SiGe quantum wells. https://doi.org/10.1063/1.3270539

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