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arXiv · 0911.1219

Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric

M. P. Walser·W. L. Kalb·T. Mathis·B. Batlogg
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Abstract

We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1-2 V, enabled by the almost trap-free interface between the organic semiconductor and an ultra-thin (<20 nm) and highly insulating single-layer fluoropolymer gate dielectric (Cytop). OFETs with PTCDI-C13 (N,N'-ditridecylperylene-3,4,9,10-tetracarboxylicdiimide) as semiconductor exhibit outstanding transistor characteristics: very low threshold voltage (0.2V), onset at 0V, steep subthreshold swing (0.1-0.2 V/decade), no hysteresis and excellent stability against gate bias stress. It is gratifying to notice that such small OFET operating voltages can be achieved with the relatively simple processing techniques employed in this study.

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M. P. Walser, W. L. Kalb, T. Mathis, B. Batlogg. 2009-11-06. Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric. https://doi.org/10.1063/1.3267055

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