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arXiv · 0910.4783

Wafer-scale synthesis and transfer of graphene films

Youngbin Lee·Sukang Bae·Houk Jang·Sukjae Jang·Shou-En Zhu·Sung Hyun Sim·Young Il Song·Byung Hee Hong·Jong-Hyun Ahn
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Abstract

We developed means to produce wafer scale, high-quality graphene films as large as 3 inch wafer size on Ni and Cu films under ambient-pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1,100 cm2/Vs and 550 cm2/Vs at drain bias of -0.75V, respectively. The piezo-resistance gauge factor of strain sensor was ~6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.

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Youngbin Lee, Sukang Bae, Houk Jang, Sukjae Jang, Shou-En Zhu, Sung Hyun Sim, Young Il Song, Byung Hee Hong, Jong-Hyun Ahn. 2009-10-26. Wafer-scale synthesis and transfer of graphene films. https://doi.org/10.1021/nl903272n

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