arXiv · 0910.4708
Substrate Modulated Graphene Quantum Dot
Abstract
We propose a new method to use gapped graphene as barrier to confine electrons in gapless graphene and form a good quantum dot, which can be realized on an oxygen-terminated $SiO_{2}$ substrate partly H-passivated. In particular, we use ferromagnetic insulators deposited on top of barrier which give rise to a spin related energy spectrum and transport properties. Compared to the complexity of etched quantum dots in graphene, the setup suggested here is a promising candidate for practical applications.
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Qiong Ma, Zhi-Rong Lin, Tao Tu, Guang-Can Guo, Guo-Ping Guo. 2009-10-25. Substrate Modulated Graphene Quantum Dot. https://arxiv.org/abs/0910.4708
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