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arXiv · 0910.4095

Memory effect of Mn$_5$Ge$_3$ nanomagnets embedded inside a Mn-diluted Ge matrix

Shengqiang Zhou·Artem Shalimov·Kay Potzger·Nicole M. Jeutter·Carsten Baehtz·Manfred Helm·Juergen Fassbender·Heidemarie Schmidt
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Abstract

Crystalline Mn5Ge3 nanomagnets are formed inside a Mn-diluted Ge matrix using Mn ion implantation. A temperature-dependent memory effect and slow magnetic relaxation are observed below the superparamagnetic blocking temperature of Mn5Ge3. Our findings corroborate that the observed spin-glass-like features are caused by the size distribution of Mn5Ge3 nanomagnets, rather than by the inter-particle interaction through the Mn-diluted Ge matrix.

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Shengqiang Zhou, Artem Shalimov, Kay Potzger, Nicole M. Jeutter, Carsten Baehtz, Manfred Helm, Juergen Fassbender, Heidemarie Schmidt. 2009-10-21. Memory effect of Mn$_5$Ge$_3$ nanomagnets embedded inside a Mn-diluted Ge matrix. https://doi.org/10.1063/1.3264076

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