Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

S. Weingart; C. Bock; U. Kunze; F. Speck; Th. Seyller; L. Ley

doi:10.1063/1.3276560

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arXiv · 0910.4010

Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

S. Weingart·C. Bock·U. Kunze·F. Speck·Th. Seyller·L. Ley

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Abstract

We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170 ohm which is measured in a non-local, four-terminal configuration at 4.2 K and which vanishes as the temperature is increased above 80 K.

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S. Weingart, C. Bock, U. Kunze, F. Speck, Th. Seyller, L. Ley. 2009-10-21. Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions. https://doi.org/10.1063/1.3276560

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