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arXiv · 0910.1981

Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations

Shengqiang Zhou·Danilo Buerger·Manfred Helm·Heidemarie Schmidt
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Abstract

Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect (AHE). Usually, the reported AHE (1) is observable at temperatures above 10 K, (2) exhibits no hysteresis, and (3) changes the sign of slope. We observed a similar Hall resistance in Mn implanted Ge with the Mn concentration as low as 0.004%. We show that the puzzling AHE features can be explained by considering a two-band-like conduction in Ge:Mn.

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Shengqiang Zhou, Danilo Buerger, Manfred Helm, Heidemarie Schmidt. 2009-10-11. Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations. https://doi.org/10.1063/1.3257363

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