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arXiv · 0910.1797

Dangling-bond charge qubit on a silicon surface

Lucian Livadaru·Peng Xue·Zahra Shaterzadeh-Yazdi·Gino A. DiLabio·Josh Mutus·Jason L. Pitters·Barry C. Sanders·Robert A. Wolkow
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Abstract

Two closely spaced dangling bonds positioned on a silicon surface and sharing an excess electron are revealed to be a strong candidate for a charge qubit. Based on our study of the coherent dynamics of this qubit, its extremely high tunneling rate ~ 10^14 1/s greatly exceeds the expected decoherence rates for a silicon-based system, thereby overcoming a critical obstacle of charge qubit quantum computing. We investigate possible configurations of dangling bond qubits for quantum computing devices. A first-order analysis of coherent dynamics of dangling bonds shows promise in this respect.

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Lucian Livadaru, Peng Xue, Zahra Shaterzadeh-Yazdi, Gino A. DiLabio, Josh Mutus, Jason L. Pitters, Barry C. Sanders, Robert A. Wolkow. 2009-10-09. Dangling-bond charge qubit on a silicon surface. https://doi.org/10.1088/1367-2630/12/8/083018

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