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arXiv · 0910.0615

Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates

S. Tongay·T. Schumann·A. F. Hebard
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Abstract

We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.

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S. Tongay, T. Schumann, A. F. Hebard. 2009-10-04. Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates. https://doi.org/10.1063/1.3268788

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