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arXiv · 0908.3304

Low-noise top-gate graphene transistors

G. Liu·W. Stillman·S. Rumyantsev·Q. Shao·M. Shur·A. A. Balandin
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Abstract

We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer graphene channels. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and Hooge parameter below 2 x 10^-3. The analysis of the noise spectral density dependence on the top and bottom gate biases helped us to elucidate the noise sources in these devices and develop a strategy for the electronic noise reduction. The obtained results are important for all proposed graphene applications in electronics and sensors.

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G. Liu, W. Stillman, S. Rumyantsev, Q. Shao, M. Shur, A. A. Balandin. 2009-08-23. Low-noise top-gate graphene transistors. https://doi.org/10.1063/1.3180707

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