arXiv · 0908.0607
Study of molecular spin-crossover complex Fe(phen)2(NCS)2 thin films
Abstract
We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)2(NCS)2 (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a temperature-driven spin transition. We have investigated the current-voltage characteristics of a device based on such films. From the space charge-limited current regime, we deduce a mobility of 6.5x10-6 cm2/V?s that is similar to the low-range mobility measured on the widely studied tris(8-hydroxyquinoline)aluminium organic semiconductor. This work paves the way for multifunctional molecular devices based on spin-crossover complexes.
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Shengwei Shi, G. Schmerber, J. Arabski, J. -B. Beaufrand, D. J. Kim, S. Boukari, M. Bowen, N. T. Kemp, N. Viart, G. Rogez, E. Beaurepaire, H. Aubriet, J. Petersen, C. Becker, D. Ruch. 2009-08-05. Study of molecular spin-crossover complex Fe(phen)2(NCS)2 thin films. https://doi.org/10.1063/1.3192355
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