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arXiv · 0908.0047

Field-induced carrier delocalization in the strain-induced Mott insulating state of an organic superconductor

Yoshitaka Kawasugi·Hiroshi M. Yamamoto·Naoya Tajima·Takeo Fukunaga·Kazuhito Tsukagoshi·Reizo Kato
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Abstract

We report the influence of the field effect on the dc resistance and Hall coefficient in the strain-induced Mott insulating state of an organic superconductor $κ$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br. Conductivity obeys the formula for activated transport $σ_{\Box} = σ_{0}\exp(-W/k_{B}T)$, where $σ_{0}$ is a constant and $W$ depends on the gate voltage. The gate voltage dependence of the Hall coefficient shows that, unlike in conventional FETs, the effective mobility of dense hole carriers ($\sim1.6\times 10^{14}$ cm$^{-2}$) is enhanced by a positive gate voltage. This implies that carrier doping involves delocalization of intrinsic carriers that were initially localized due to electron correlation.

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Yoshitaka Kawasugi, Hiroshi M. Yamamoto, Naoya Tajima, Takeo Fukunaga, Kazuhito Tsukagoshi, Reizo Kato. 2009-09-21. Field-induced carrier delocalization in the strain-induced Mott insulating state of an organic superconductor. https://doi.org/10.1103/physrevlett.103.116801

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