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arXiv · 0907.3579

Electric breakdown in ultra-thin MgO tunnel barrier junctions for spin-transfer torque switching

M. Schäfers·V. Drewello·G. Reiss·A. Thomas·K. Thiel·G. Eilers·M. Münzenberg·H. Schuhmann·M. Seibt
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Abstract

Magnetic tunnel junctions for spin-transfer torque switching were prepared to investigate the dielectric breakdown. The breakdown occurs typically at voltages not much higher than the switching voltages, a bottleneck for the implementation of spin-transfer torque Magnetic Random Access Memory. Intact and broken tunnel junctions are characterized by transport measurements and then prepared for transmission electron microscopy and energy dispersive x-ray spectrometry by focussed ion beam. The comparison to our previous model of the electric breakdown for thicker MgO tunnel barriers reveals significant differences arising from the high current densities.

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M. Schäfers, V. Drewello, G. Reiss, A. Thomas, K. Thiel, G. Eilers, M. Münzenberg, H. Schuhmann, M. Seibt. 2009-07-21. Electric breakdown in ultra-thin MgO tunnel barrier junctions for spin-transfer torque switching. https://doi.org/10.1063/1.3272268

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