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arXiv · 0906.5006

Bistable hysteresis and resistance switching in hydrogen gold junctions

M. L. Trouwborst·E. H. Huisman·S. J. van der Molen·B. J. van Wees
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Abstract

Current-voltage characteristics of H2-Au molecular junctions exhibit intriguing steps around a characteristic voltage of 40 mV. Surprisingly, we find that a hysteresis is connected to these steps with a typical time scale > 10 ms. This time constant scales linearly with the power dissipated in the junction beyond an ofset power P_s = IV_s. We propose that the hysteresis is related to vibrational heating of both the molecule in the junction and a set of surrounding hydrogen molecules. Remarkably, we can engineer our junctions such that the hysteresis' characteristic time becomes >days. We demonstrate that reliable switchable devices can be built from such junctions.

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M. L. Trouwborst, E. H. Huisman, S. J. van der Molen, B. J. van Wees. 2009-08-03. Bistable hysteresis and resistance switching in hydrogen gold junctions. https://doi.org/10.1103/physrevb.80.081407

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