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arXiv · 0906.4054

Theory of the spin relaxation of conduction electrons in silicon

J. L. Cheng·M. W. Wu·J. Fabian
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Abstract

A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 K. The calculated spin relaxation times $T_1$ agree with the spin resonance and spin injection data, following a $T^{-3}$ temperature dependence. The valley anisotropy of $T_1$ and the spin relaxation rates for hot electrons are predicted.

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J. L. Cheng, M. W. Wu, J. Fabian. 2009-06-22. Theory of the spin relaxation of conduction electrons in silicon. https://doi.org/10.1103/physrevlett.104.016601

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