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arXiv · 0905.4409

Etching of Graphene Devices with a Helium Ion Beam

M. C. Lemme·D. C. Bell·J. R. Williams·L. A. Stern·B. W. H. Baugher·P. Jarillo-Herrero·C. M. Marcus
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Abstract

We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (SiO2) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.

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M. C. Lemme, D. C. Bell, J. R. Williams, L. A. Stern, B. W. H. Baugher, P. Jarillo-Herrero, C. M. Marcus. 2009-10-08. Etching of Graphene Devices with a Helium Ion Beam. https://doi.org/10.1021/nn900744z

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