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Insulator to semi-metal transition in graphene oxide

Goki Eda·Cecilia Mattevi·Hisato Yamaguchi·HoKwon Kim·Manish Chhowalla
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Abstract

Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semi-metal transitions with reduction. The apparent transport gap ranges from 10 ~ 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to increased number of available hopping sites.

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Goki Eda, Cecilia Mattevi, Hisato Yamaguchi, HoKwon Kim, Manish Chhowalla. 2009-05-18. Insulator to semi-metal transition in graphene oxide. https://arxiv.org/abs/0905.2799

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