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arXiv · 0905.2142

New Possibilities for Obtaining a Steep Nonlinear Current-Voltage Characteristics in some Semiconductor Structures

D. I. Sheka·O. V. Tretyak·A. M. Korol·A. K. Sen·A. Mookerjee
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Abstract

Electronic processes in a semiconductor system consisting of some Resonant Tunnelling Structures, built in the depletion region of a Schottky barrier, are investigated. It is shown that the Schottky barrier can block or unblock the resonant tunnelling current effectively. Tunnelling processes do reveal the coherent character. Sharp nonlinear current-voltage characteristics are observed on both of the forward and the reverse branches.

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D. I. Sheka, O. V. Tretyak, A. M. Korol, A. K. Sen, A. Mookerjee. 2009-05-13. New Possibilities for Obtaining a Steep Nonlinear Current-Voltage Characteristics in some Semiconductor Structures. https://arxiv.org/abs/0905.2142

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