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Photoluminescence from surface GaN/AlGaN quantum wells: Effect of the surface states

Y. D. Glinka·T. V. Shahbazyan·H. O. Everitt·J. F. Muth·J. Roberts·P. Rajagopal·J. Cook·E. Piner·K. Linthicum
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Abstract

We report on photoluminescence (PL) measurements at 85 K for GaN/AlGaN surface quantum wells (SQW's) with a width in the range of 1.51-2.9 nm. The PL spectra show a redshift with decreasing SQW width, in contrast to the blueshift normally observed for conventional GaN QW's of the same width. The effect is attributed to a strong coupling of SQW confined exciton states with surface acceptors. The PL hence originates from the recombination of surface-acceptor-bound excitons. Two types of acceptors were identified.

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Y. D. Glinka, T. V. Shahbazyan, H. O. Everitt, J. F. Muth, J. Roberts, P. Rajagopal, J. Cook, E. Piner, K. Linthicum. 2010-01-30. Photoluminescence from surface GaN/AlGaN quantum wells: Effect of the surface states. https://arxiv.org/abs/0905.1972

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